| 1. | Microwave electron cyclotron resonance ( mwecr ) cvd is a newly developed technique for plasma processing and materials fabrication , such as plasma etching and films deposition
本论文介绍了我们对ecr等离子体cvd系统的测试、 bn薄膜的制备和薄膜光学特性研究。 |
| 2. | Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave
摘要采用微波电子回旋共振等离子体反应离子刻蚀( ecr - rie )装置对牦牛毛纤维进行表面改性，从而改善牦牛毛的可纺性。 |
| 3. | Sub - thesis is mainly on the test and research of the photoelectric properties of a - si : h thin film deposited by microwave electron cyclotron resonance chemical vapor deposition ( mw - ecr cvd ) system
本论文主要是对mw - ecrcvd系统沉积的a - si : h薄膜进行了一系列的光电特性的测试研究工作。 |
| 4. | But the deposition rate and quality of a - si : h was primarily affected by preparation methods . recently , the microwave electron cyclotron resonance ( mwecr ) cvd method was weightily studied
为了获得高速沉积下的高品质a - si : h薄膜，使其能够产业化，微波电子回旋共振化学气相沉积( mwecrcvd )方法在国际上受到了人们广泛的重视。 |
| 5. | In view of its virtue of high degree of electron and ion generations , the microwave electron cyclotron resonance ( mwecr ) cvd method is expected to deposit device quality a - si : h at high deposition rate
鉴于微波电子回旋共振化学气相沉积( mwecrcvd )系统具有电子和离子产生率高等优点，人们期望它能在较高的沉积速率下获得器件级质量的a - si ： h薄膜。 |
| 6. | The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films . in the paper , ch and si - hn of a - si : h films , fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method , have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting . the effects of ratio of h2 / sih4 on ch and si - hn are studied
Fourier红外透射( ftir )谱是研究氢化非晶硅( a - si : h )薄膜中氢含量( c _ h )及硅-氢键合模式( si - h _ n )最有效的手段，对于微波等离子体化学气相沉积( mwecrcvd )方法在不同h _ 2 sih _ 4稀释比下制备出的氢化非晶硅薄膜，我们通过红外透射光谱的基线拟合、高斯拟合分析，得出了薄膜中的氢含量，硅氢键合方式及其组分，并分析了这些参数随h _ 2 sih _ 4稀释比变化的规律。 |
